Brite Semiconductor Releases ONFI 4.2 IO and Physical Layer IP based on SMIC 14nm FinFET Process

2023-08-31 灿芯半导体官网
ONFI 4.2 IO,ONFI physical layer IP,ONFI 4.2 physical layer IP,All-Digital DLL design

Brite  Semiconductor (“Brite”), a leading provider of custom ASIC design,  manufacturing and IP,  on Jun.3, 2021 announced the launch of ONFI (Open NAND  Flash Interface) 4.2 IO and Physical Layer IP. The IO supports  SDR/NV-DDR/NV-DDR2 1.8V, NV-DDR3 1.2V, and the physical layer IP adopts  full digital design with features of low power consumption and small  area.

 

The  ONFI physical layer IP can be adopted in the ONFI and is compatible  with ONFI 4.2/4.1/4.0/3.2 etc. standards. Currently, the IO and physical  layer IP is silicon proven on 40nm processe.

 

ONFI 4.2 physical layer IP has the following features:

1. Silicon proven on 40LL process

2. Achieve Max 1600Mbps on NV_DDR3 1.2V and Max 800Mbps on NV_DDR2 1.8V

3. Achieve Max 800Mbps on 40LL

4. Support ODT (On-Die Termination) and Impedance calibration

5. Compliant with the ONFI 4.2/4.1/4.0/3.2 etc. standard

6. Support DQS Gate, Write and Read training

7. Adopt All-Digital DLL design

8. Adopt APB register interface

 

“With  more than 10 years of successful experience of custom ASIC design,  manufacturing and IP development, Brite Semiconductor provides the value  to our customers,” said Yadong Liu, VP of Engineering at Brite  Semiconductor. “The ONFI IP is silicon proven , which can help customers  quickly achieve mass production.”

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