Renesas Collaborates with AMD to Demo Full RF and Digital Front-End Design for 5G Active Antenna Systems
Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, today announced plans to showcase a full RF front-end solution for 5G Active Antenna Systems (AAS) radios in collaboration with AMD. Paired with the field-proven AMD Zynq® UltraScale+™ RFSoC Digital Front End OpenRAN Radio (O-RU) Reference Design, the RF front end includes RF switches, low-noise amplifiers, and pre-drivers. It offers a complete solution to meet the demand of the growing mobile network infrastructure market. The reference platform will be demonstrated at the Mobile World Congress in Barcelona, February 27 – March 2 at the AMD booth (#2M61 Hall 2).
The new 5G design platform integrates all the essential RF and digital front-end hardware for base stations operating in the Open Radio Access Network (O-RAN) ecosystem. This includes a high-isolation multi-throw DPD switch, a high-gain and linearity pre-driver in a compact package, an integrated switch, and Low Noise Amplifier (LNA) with input signal coupling functionality. This full RF front-end platform is designed to efficiently process and transmit data to wireless networks with optimized power levels. Moreover, it has been integrated with the AMD RFSoC DFE ZCU670 Evaluation Kit for quick prototyping and rapid development of wireless network systems. The platform offers superior RF performance while minimizing DPD resources for TX channel linearization, improving radio efficiency and ultimately reducing operating costs for wireless network providers.
The RF front-end solution is the latest 5G solution to be jointly developed by Renesas and AMD. Previously, the two companies collaborated on the high-performance RF timing solution for 5G Next-Gen Radio (5G NR), which incorporates Renesas’ IEEE 1588-enabled System Synchronizer as part of the DFE ZCU670 Evaluation Kit.
"We are thrilled to be collaborating with AMD once again to demonstrate our latest RF capabilities at the upcoming Mobile World Congress," said Naveen Yanduru, Vice President of RF Engineering at Renesas’ Infrastructure Business Division. "Using our turnkey hardware solution, developers of 5G RF wireless infrastructure systems can reduce development time and cost. We are confident that this solution will set a new standard in RF performance and efficiency for the wireless communication market."
“The RFMC expansion connectors on the ZCU670 evaluation board allow our customers to quickly prototype and evaluate a complete RF lineup design for their Radio. To demonstrate, we have collaborated with Renesas again to develop an optimized RF Front End reference design targeting the N78 band,” said Brendan Farley, Corporate Vice President of Wireless Engineering at AMD. “As the market for OpenRAN 5G Radio (O-RU) continues to grow, these reference designs will help accelerate our mutual customers’ time to market with proven solutions.”
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Products Introduction Power Schottky Small Signal Schottky Super Schottky Small Signal Switching Diode General Purpose Rectifier Fast Recovery Rectifier Ultra Fast Recovery Rectifier Super Fast Recovery Rectifier FRED Diode Rectifier Bridge ESD Protection Device Transient Voltage Suppressors Zener Diode MOSFET Small Signal BJT
Selection guide GENERAL PURPOSE RECTIFIER,MOSFET,ESD PROTECTION DEVICES,POWER SCHOTTKY,快恢复整流器,超快恢复整流器,TRANSIENT VOLTAGE SUPPRESSORS,双极结型晶体管,瞬态电压抑制器,功率肖特基,ZENER DIODE,SIC SCHOTTKY,二极管整流器,SUPER SCHOTTKY,通用整流器,保护装置,PROTECTION DEVICES,ULTRA FAST RECOVERY RECTIFIER,小信号肖特基,小信号BJT,SMALL SIGNAL SCHOTTKY,静电保护器件,FRED,BIPOLAR JUNCTION TRANSISTORS,SMALL SIGNAL SWITCHING DIODE,FAST RECOVERY RECTIFIER,SCHOTTKY,TRANSIENT VOLTAGE SUPPRESSOR,DIODE RECTIFIER,超级肖特基,SMALL SIGNAL BJT,SUPER FAST RECOVERY RECTIFIER,SIC肖特基,ESD PROTECTION DEVICE,超快速恢复整流器,小信号开关二极管,FRED DIODE 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