8Mb to 128Mb High-Speed CMOS PSRAMs in 6mmx7mmx1mm 48-ball FPBGA and 4mmx4mmx1mm 49-ball FPBGA packages
Alliance Memory introduced a family of high-speed CMOS pseudo SRAMs (CMOS PSRAMs) with densities from 8Mb to 128Mb in 6.0mmx 7.0mmx1.0mm 48-ball FPBGA and 4mmx4mmx1mm 49-ball FPBGA packages.
Part Numbers: AS1C512K16PL-70BIN, AS1C512K16P-70BIN, AS1C1M16PL-70BIN, AS1C1M16P-70BIN, AS1C2M16P-70BIN, AS1C4M16PL-70BIN, and AS1C8M16PL-70BIN.
Key Specifications and Benefits:
Wide range of densities available:
8Mb, 16MB, and 32MB devices featuring interfaces compatible with asynchronous type SRAM
64Mb and 128Mb CellularRAM PSRAMs featuring a multiplexed address/data bus for greater bandwidth
Offered in 0 mm x 7.0 mm x 1.0 mm 48-ball FPBGA and 4.0 mm by 4.0 mm by 1.0 mm 49-ball FPBGA packages
Support asynchronous and burst operation
Feature read or write burst lengths of 4, 8, 16, or 32 words, or continuous burst
Available in industrial temperature ranges of -30℃ to +85℃ and -40℃ to +85℃
Fast access speeds of 70s
Operate from a single power supply of 1.7V to 1.95V or 2.6V to 3.3V
Power-saving features:
Auto temperature-compensated self-refresh (ATCSR)
Partial array self-refresh (PASR)
Deep power down (DPD) mode
Target Applications:
Wireless, automotive, networking, and industrial applications.
The Context: Alliance Memory’s high-speed CMOS PSRAMs combine the most desirable features of SRAMs and DRAMs to provide designers with easy-to-use, low-power, and cost-effective memory solutions. Featuring high-density DRAM cores with SRAM interfaces and on-chip refresh circuits for refresh-free operation, the devices provide the high bandwidth and the low power necessary to replace SRAMs in portable electronics such as mobile phones and PDAs or to serve as companion chips to burst NOR Flash applications.
Availability: Samples and production quantities of the PSRAMs were available in November 2018.
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