GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor

2022-09-06

●Features
■175 °C Maximum Operating Temperature
■Gate Oxide Free SiC Switch
■Exceptional Safe Operating Area
■Excellent Gain Linearity
■Temperature Independent Switching Performance
■Low Output Capacitance
■Positive Temperature Coefficient of RDS,ON
■Suitable for Connecting an Anti-parallel Diode
●Advantages
■Compatible with Si MOSFET/IGBT Gate Drive ICs
■> 20 μs Short-Circuit Withstand Capability
■Lowest-in-class Conduction Losses
■High Circuit Efficiency
■Minimal Input Signal Distortion
■High Amplifier Bandwidth

GENESIC SEMICONDUCTOR

GA06JT12-247IX2204HCPL-316JHCPL-322JIXD_604IXD_614MIC4452YNLX4510UCC27322

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Part#

Silicon Carbide Junction Transistor

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Down Hole Oil Drilling ]Geothermal Instrumentation ]Hybrid Electric Vehicles ]Solar Inverters ]Switched-Mode Power Supply ]Power Factor Correction ]Induction Heating ]Uninterruptible Power Supply ]Anti-parallel Diode ]

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Datasheet

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Please see the document for details

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TO-247AB

English Chinese Chinese and English Japanese

Aug 2014

Revision 4

1.6 MB

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