WNM3011 N-Channel, 30V, 5.7A, Power MOSFET

2023-05-27

●Descriptions
■The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM3011 is Pb-free.
●Features
■Trench Technology
■Supper high density cell design
■Excellent ON resistance for higher DC current
■Extremely Low Threshold Voltage
■Small package SOT-23-6L

WILLSEMI

WNM3011WNM3011-6/TR

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Part#

N-Channel, 30V, 5.7A, Power MOSFETN-Channel enhancement MOS Field Effect Transistor

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Relay ]Solenoid ]Motor ]LED ]DC-DC converter circuit ]Power Switch ]Load Switch ]Charging ]

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Datasheet

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Please see the document for details

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SOT-23-6L

English Chinese Chinese and English Japanese

Dec, 2011

Rev. 1.0

320 KB

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