MR45V064B 64k(8,192-Word × 8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI
in the ferroelectric process and silicon-gate CMOS technology. The MR45V064B is accessed using Serial
Peripheral Interface.Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required
to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as
those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the
power consumption during a write can be reduced significantly.
The MR45V064B can be used in various applications, because the device is guaranteed for the write/read
tolerance of 1012 cycles per bit and the rewrite count can be extended significantly.
|
|
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
SOP;P-SOP8-200-1.27-T2K |
|
|
English Chinese Chinese and English Japanese |
|
|
Jan 08, 2016 |
|
|
|
|
|
FEDR45V064B-01 |
|
|
672 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
