MR44V064A 64k Bit(8,192-Word × 8-Bit) FeRAM (Ferroelectric Random Access Memory) I2C

2020-05-23
The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed

in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

Serial Interface ( I2C BUS ).Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup

required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks,

such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and

the power consumption during a write can be reduced significantly.

The MR44V064A can be used in various applications, because the device is guaranteed for the write/read

tolerance of 1012 cycles per bit and the rewrite count can be extended significantly

LAPIS

MR44V064A

More

Part#

64k Bit FeRAM (Ferroelectric Random Access Memory)

More

More

Datasheet

More

RoHS

More

Please see the document for details

More

More

SOP;P-SOP8-200-1.27-T2K

English Chinese Chinese and English Japanese

Sep. 1, 2017

FEDR44V064A-02

705 KB

- The full preview is over. If you want to read the whole 16 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: