NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3type case designed for general–purpose amplifier and low–frequency switching applications.
●Features:
■High DC Current Gain @ I-C = 10A:
▲h-FE = 2400 Typ (NTE251)
▲h-FE = 4000 Typ (NTE252)
■Collector–Emitter Sustaining Voltage: V-CEO(sus) = 100V Min
■Monolithic Construction with Built–In Base–Emitter Shunt Resistors
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Silicon Complementary Transistors 、 Darlington Power Amplifier |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/12/26 |
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81 KB |
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