High Barrier Low VF Trench MOS Power Schottky Rectifiers MBR10L45CT / MBR10L45FCT
●Features
■High Current Density Schottky
■150°C operating junction temperature.
■Offer 5A half wave and 10A full wave rectification.
■Low power loss, high efficiency.
■Low Forward Voltage Drop
■High current capability
■High surge capability.
■Guardring for overvoltage protection.
■Low stored charge majority carrier conduction
■Lead-free parts meet RoHS requirments.
■Suffix "-H" indicates Halogen-free part, ex.MBR10L45CT-H.
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Datasheet |
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Please see the document for details |
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ITO-220AB;TO-220AB |
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English Chinese Chinese and English Japanese |
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2016/07/19 |
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Revision C |
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DS-22266V |
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179 KB |
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