CMPA801B025 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC is available in
a 10-lead metal/ceramic flanged package (CMPA801B025F) or small formfactor
pill package (CMPA801B025P) for optimal electrical and thermal performance.
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CMPA801B025 、 CMPA801B025F-AMP 、 CMPA801B025F-TB 、 CMPA801B025P 、 CMPA801B025F |
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25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier 、 Test board with GaN HEMT installed 、 Test board without GaN HEMT |
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[ Marine Radar ][ Communications ][ Satellite Communication Uplink ] |
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Datasheet |
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ESD(CDM) 、 ESD(HBM) |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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8/28/2014 |
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Rev 1.0 |
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2.6 MB |
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