PolyZen Devices for EOS Protection in LED Applications
With today’s growing demands for increased energy savings and reduced power consumption, light emitting diodes — or LEDs — have become the solution of choice for the next generation of lighting applications. As a result, more and more attention is being paid to protecting against damage from EOS (electrical overstress) events, which, specifically, refer to any undesirable voltage, current or power that the LED application can be subjected to.
LED applications are vulnerable to damage when the EOS event exceeds the maximum requirements of the design’s specifications. EOS events are typically transient; meaning they occur for a short period of time, typically less than one second, and are often referred to as spikes (e.g., current spikes or voltage spikes). However, EOS events can be permanent, such as inserting a battery backward into a battery-powered LED flashlight. Any single EOS event, long or short in duration, or any number of events, have the potential to cause damage to the LED. This damage can be exhibited either as an immediate failure or a failure that occurs many hours after the EOS event.
This paper describes how Littelfuse PolyZen device helps provide an efficient, cost effective, space-saving solution for protecting LED applications from damage from EOS faults. It also presents actual tests by in which harsh EOS signals were generated to simulate their effects on LED devices. The experiments are evaluated to show how PolyZen devices can help suppress the impact of EOS faults to achieve effective circuit protection.
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PolyZen Devices 、 precision Zener diode 、 PolySwitch PPTC (Polymer Positive Temperature Coefficient) device 、 transient voltage suppression(TVS) devices |
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2016/11/23 |
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1.3 MB |
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