SMG2301-C -3.5A , -20V , RDS(ON) 75mΩΩΩΩ P-Channel Enhancement Mode MOSFET
●DESCRIPTION
■The SMG2301-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
■The SMG2301-C meet the RoHS and Green Product requirement with full function reliability approved.
●FEATURES
■Advanced high cell density Trench technology
■Super Low Gate Charge
■Green Device Available
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P-Channel Enhancement Mode MOSFET 、 highest performance trench N-Ch MOSFETs |
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Datasheet |
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Please see the document for details |
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SC-59 |
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English Chinese Chinese and English Japanese |
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25-May-2017 |
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Rev.B |
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347 KB |
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