TZNAIUMT6 Transistor/MOSFET SOT-363 (UMT6)

2025-03-21
This document provides detailed information about the TZNAIUMT6 transistor/MOSFET, including its internal structure, materials used, and bonding methods. The document also includes a table listing the materials used in the product's construction, such as mold compound, lead frame, external plating, die, and bonding wire. The die bonding method is specified as eutectic Au-Si. The document is produced by ROHM Co., Ltd., and it is important to note the safety and application considerations mentioned, as well as the limitations of the product's use in certain high-reliability applications.

ROHM

TZNAIUMT6

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Part#

Transistor/MOSFET

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General electronic equipment ]AV/OA devices ]communication ]consumer systems ]gaming/entertainment sets ]

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Datasheet

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Please see the document for details

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SOT-363 (UMT6)

English Chinese Chinese and English Japanese

2016.1

Rev.A

R1102A

166 KB

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