SX3416MI 20V N-Channel Enhancement Mode MOSFET

2025-03-21
SX3416MI是一款采用先进沟槽技术,具有20V VDS和6.8A ID的N沟道增强型MOSFET。该器件具有出色的RDS(ON)、低栅极电荷,并且可以在低至2.5V的栅极电压下工作。它适用于电池保护或开关应用,如锂离子电池保护、无线冲击和手机快充。

SXSEMI

SX3416MI

More

Part#

MOSFET

More

锂离子电池保护 ]无线冲击 ]手机快充 ]

More

Datasheet

More

More

Please see the document for details

More

More

SOT-23-3L

English Chinese Chinese and English Japanese

973 KB

- The full preview is over. If you want to read the whole 5 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: