-30V P+P SX30P03D -Channel Enhancement Mode MOSFET

2025-03-21
SX30P03D是一款采用先进沟槽技术的MOSFET,提供优异的RDS(ON)、低栅极电荷,并可在低至4.5V的栅极电压下运行。该器件适用于电池保护应用或开关应用。其绝对最大额定值包括-30V的漏源电压、±20V的栅极-源极电压、-35A的连续漏极电流(在-10V栅极电压下,25℃温度),以及72.2mJ的单脉冲雪崩能量。电气特性包括漏源击穿电压、零栅极电压漏极电流、栅极阈值电压、静态漏源导通电阻等。该器件的封装为PDFN3*3-8L双列直插。

SXSEMI

SX30P03D

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Part#

MOSFET

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电池保护 ]开关应用 ]

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Datasheet

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PDFN3*3-8L

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