SX300N10TLG2 - 100V N-Channel Enhancement Mode MOSFET

2025-03-21
SX300N10TLG2是一款采用先进技术制造的100V N-Channel增强型MOSFET。它具有出色的RDS(ON)、低栅极电荷和RDS(ON) <2.0mΩ @ VGS=10V的特性,适用于电池保护或开关应用。该器件的栅极电压低至10V,封装为TO-263-6L。其绝对最大额定值包括漏源电压100V、栅极-源极电压±20V、连续漏极电流300A(VGS=10V,TC=25℃)等。电气特性包括漏源击穿电压、栅极-源极漏电流、零栅极电压漏极电流、栅极阈值电压、漏源导通电阻等。典型特性图包括输出特性、转移特性、RDS(ON)与漏极电流和栅极电压的关系、电容特性等。

SXSEMI

SX300N10TLG2

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Part#

MOSFET

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电池保护 ]开关应用 ]DC/DC转换器 ]LED背光 ]电源管理开关 ]

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Datasheet

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TO-263-6L

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