SX2N7002AI

2025-03-21
SX2N7002AI是一款采用先进沟槽技术,VDS = 60V ID = 0.3A的N沟道增强型MOSFET。它具有出色的RDS(ON)、低栅极电荷和RDS(ON) < 3Ω @ VGS=10V的运行特性,并且栅极电压低至4.5V。该器件适用于电池保护或开关应用。

SXSEMI

SX2N7002AI

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MOSFET

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电池保护 ]负载开关 ]不间断电源 ]

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Datasheet

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SOT-23

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