SX20P04D -40V P-Channel Enhancement Mode MOSFET

2025-03-21
SX20P04D采用先进的沟槽技术,提供优异的RDS(ON)、低栅极电荷,并可在4.5V以下的栅极电压下运行。该器件适用于用作电池保护或在其他开关应用中。VDS = -40V ID =-20A RDS(ON) < 40mΩ @ VGS=-10V 应用:电池保护、负载开关、不间断电源。

SXSEMI

SX20P04D

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MOSFET

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电池保护 ]负载开关 ]不间断电源 ]

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Datasheet

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TO-252-3L

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