60V N+P SX20G06GD -Channel Enhancement Mode MOSFET

2025-03-21
SX20G06GD是一款采用先进沟槽技术的60V N+P增强型MOSFET,提供优异的RDS(ON)、低栅极电荷,RDS(ON) < 40mΩ @ VGS=10V,以及低至4.5V的栅极电压操作。该器件适用于电池保护或其他开关应用。其主要特性包括低导通电阻、低栅极电荷和宽工作电压范围。适用于升压驱动器、无刷电机等应用。

SXSEMI

SX20G06GD

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Part#

MOSFET

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电池保护 ]开关应用 ]升压驱动器 ]无刷电机 ]

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Datasheet

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Please see the document for details

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TO-252-4L

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