SX180P04T6 -40V P-Channel Enhancement Mode MOSFET

2025-03-21
使用先进的沟槽技术,提供优异的RDS(ON)、低栅极电荷和低VDS。VDS = -40V ID =-180 A RDS(ON) < 2.8mΩ @ VGS=-10V 适用于电池保护或开关应用。封装:TO-263-6L

SXSEMI

SX180P04T6

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Part#

MOSFET

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电池保护 ]开关应用 ]

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Datasheet

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TO-263-6L

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