SX10P04D -40V P-Channel Enhancement Mode MOSFET

2025-03-21
SX10P04D是一款采用先进沟槽技术的MOSFET,具有优异的RDS(ON)、低栅极电荷和低栅极电压(低至4.5V)的特性。该器件适用于电池保护或其他开关应用。其主要特性包括-40V的漏源电压、-10A的连续漏极电流和小于65mΩ的RDS(ON)值。该产品采用TO-252-3L封装。

SXSEMI

SX10P04D

More

Part#

MOSFET

More

电池保护 ]负载开关 ]不间断电源 ]

More

Datasheet

More

More

Please see the document for details

More

More

TO-252-3L

English Chinese Chinese and English Japanese

1.2 MB

- The full preview is over. If you want to read the whole 5 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: