MMDT3906V DUAL TRANSISTOR (PNP+PNP)

2025-03-20
MMDT3906V是一款双PNP晶体管,采用 epitaxial planar die construction 结构,适用于低功耗放大和开关应用。该产品具有以下特点:SOT-563封装,集电极-基极电压(VCBO)为-40V,集电极-发射极电压(VCEO)为-40V,发射极-基极电压(VEBO)为-5V,集电极电流(IC)为-0.2A,集电极功耗(pC)为150mW,工作结温和存储温度范围为-55℃至+150℃。

SXSEMI

MMDT3906V

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Part#

双PNP晶体管

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低功耗放大和开关 ]

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Datasheet

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SOT-563

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