Gate Drive Transformer for High-Speed SiC-MOSFET and IGBT (EP7 small SMD package)

PublishTime：2025-03-20

This document provides detailed specifications for a gate drive transformer designed for high-speed SiC-MOSFET and IGBT applications. The transformer features an EP7 small SMD package, up to 6W output power, input voltage ranging from 9V to 18V or 18 to 36V, and a flyback switching frequency of 350kHz. It offers dielectric insulation up to 4KVac, low interwinding capacitance, and high common-mode transient immunity (CMTI). The transformer is designed for use with Ti’s LM5180 and ADI’s LT8302 IC chipsets, and is suitable for common control voltage for SiC MOSFETs. It has a working voltage of 568Vrms / 800Vpk and complies with IEC62368-1/IEC61558-2-16 standards. The operating temperature range is -40℃ to +130℃.

Brand of Product：	UMEC
Part#：	UT38B61S 、 UT38B62S 、 UT38B63S 、 UT38B64S 、 UT38B65S 、 UT38B66S More Part#
Product Category：	Gate Drive Transformer More
Application：	[ High-Speed SiC-MOSFET and IGBT ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	EP7 small SMD package
Language：	English Chinese Chinese and English Japanese
Date of Creation：	Nov./21
Version Number：	03-38 NOV./21
Data Encoding：	03-38
Data Size：	159 KB

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