HUAXUANYANG HXY BSS138P,215 N-Channel Enhancement Mode MOSFET

PublishTime：2025-03-20

The BSS138P,215 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology to offer excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. It is suitable for battery protection and other switching applications. Key features include a VDS of 50V, ID of 0.22A, and RDS(ON) < 2.0Ω@ VGS=10V. The device is packaged in a SOT-23 package.

Brand of Product：	HUA XUAN YANG ELECTRONIC
Part#：	BSS138P,215 More Part#
Product Category：	N-Channel MOSFET More
Application：	[ Battery protection ][ Load switch ][ Uninterruptible power supply ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOT-23
Language：	English Chinese Chinese and English Japanese
Date of Creation：
Version Number：
Data Encoding：
Data Size：	1 MB

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