DX65F130 E-mode 650V,15A,130mΩ GaN HEMT

PublishTime：2025-03-18

DX65F130是一款增强型GaN-on-silicon晶体管，采用氮化镓作为宽禁带半导体材料，具有高功率密度。该GaN晶体管无体二极管，因此反向恢复电荷为零。该GaN FET是一款高性能e-Mode GaN FET，实现了优异的高频和高效率操作。特点包括简单的栅极输入和源极Kelvin引脚以提高噪声免疫力。该GaN功率FET结合了最高的dV/dt免疫力和行业标准低剖面、低电感、底部冷却SMT QFN封装，使设计人员能够实现简单、快速且可靠的解决方案。

Brand of Product：	氮矽科技
Part#：	DX65F130 More Part#
Product Category：	GaN HEMT More
Application：	[ 快速充电 ][ LED照明驱动器 ][ 功率因数校正 ][ LLC转换器 ][ 无线电力传输 ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	DFN8x8
Language：	English Chinese Chinese and English Japanese
Date of Creation：	Jan, 2024
Version Number：	Rev.1.2
Data Encoding：	Doc: 1.2
Data Size：	1.3 MB

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