GC2M060065K N-Channel SiC Power MOSFET

2025-03-18
该文档介绍了型号为GC2M060065K的N-Channel SiC Power MOSFET。该器件采用第二代SiC MOSFET技术,具有高阻断电压和低导通电阻的特点。它适用于高速开关,具有低电容和快速内建二极管,具有低反向恢复(Qrr)。该器件的优点包括提高系统效率、减少冷却需求、增加功率密度、提高系统开关频率、易于并联和简单驱动,以及启用 Totem-Pole PFC拓扑结构。应用领域包括电动汽车充电、服务器电源、太阳能光伏逆变器、不间断电源(UPS)和DC/DC转换器。

巨子半导体

GC2M060065K

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Part#

SiC Power MOSFET

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EV Charging ]Server Power Supplies ]Solar PV Inverters ]UPS ]DC/DC Converters ]

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Datasheet

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TO-247-4

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20231225

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