GC2M040120S Silicon Carbide Power MOSFET N-Channel Enhancement Mode

2025-03-18
该文档介绍了型号为GC2M040120S的碳化硅功率MOSFET,属于N沟道增强型。该器件具有高阻断电压和低导通电阻,适用于高速切换,易于并联和驱动。它具有雪崩 ruggedness,符合无卤素和RoHS标准。该器件可提高系统效率,减少冷却需求,增加功率密度,并提高系统切换频率。应用领域包括太阳能逆变器、开关电源、高压DC/DC转换器、电池充电器、电机驱动和脉冲功率应用。该器件采用SOT-227封装。

巨子半导体

GC2M040120S

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碳化硅功率MOSFET

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太阳能逆变器 ]开关电源 ]高压DC/DC转换器 ]电池充电器 ]电机驱动 ]脉冲功率应用 ]

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Datasheet

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Please see the document for details

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SOT-227

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