AFN7960AS 60V Dual N-Channel Enhancement Mode MOSFET

2025-03-17
AFN7960AS是一款采用先进沟槽技术的增强型N通道MOSFET,提供优异的RDS(ON)和低栅极电荷。这些器件特别适用于低压电源管理,以及需要低导线功率损耗的商业工业表面安装应用。其主要特性包括ID=12A,RDS(ON)=20mΩ@VGS=10V,ID=10A,RDS(ON)=24mΩ@VGS=4.5V,以及超级高密度单元设计,适用于极低RDS(ON)的应用。

Alfa-Mos

AFN7960AS

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增强型MOSFET

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电机和负载控制 ]白光LED系统电源管理 ]LCD电视逆变器 ]AD/DC逆变器系统 ]

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Datasheet

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Please see the document for details

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DFN 5X6-8L

English Chinese Chinese and English Japanese

June 2015

Rev.A June 2015

Doc:AFN7960AS

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