RX65T125HS2A - 650V GaN Power Transistor (FET)

PublishTime：2025-03-16

该文档介绍了RX65T125HS2A型号的650V GaN功率晶体管（FET）。该晶体管易于使用，与标准栅极驱动器兼容，具有优异的QGx RDS(on)品质因数（FOM）。它具有低QRR，无需自由轮整流二极管，低开关损耗，符合RoHS标准且无卤素。适用于高效电源供应、电信和数据通信、汽车、伺服电机等领域。文档还提供了电气参数、封装信息、热阻、典型特性曲线、电路实现、设计注意事项、封装轮廓、带卷信息、PCB布局和掩模孔尺寸等信息。

Brand of Product：	润新微电子
Part#：	RX65T125HS2A More Part#
Product Category：	GaN功率晶体管 (FET) More
Application：	[ 高效电源供应 ][ 电信和数据通信 ][ 汽车 ][ 伺服电机 ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	DFN 8 x 8
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2024/03/19
Version Number：	Rev. 1.6
Data Encoding：	Doc: 1.6
Data Size：	996 KB

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