SI2302DS N-channel enhancement mode field-effect transistor
●N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
●Product availability: SI2302DS in SOT23.
●Features and benefits:
■TrenchMOS™ technology
■Very fast switching
■Logic level compatible
■Subminiature surface mount package.
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[ Battery management ][ High speed switch ][ Low power DC to DC converter ] |
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Datasheet |
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Please see the document for details |
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SOT23(TO-236AB) |
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English Chinese Chinese and English Japanese |
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20 November 2001 |
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Rev. 02 |
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9397 750 09107 |
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553 KB |
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