ASWCJD020120A 1200V,20A Silicon Carbide Schottky Diode

2024-12-05
●Physical Characteristics
■Die size:2.95 mm x 2.95 mm (without scribe line)
■Anode pad open size:2.65 mm x 2.65 mm
■Gross die / per 6” wafer = 1647pcs
■Main characteristics:
◆VRRM = 1200V
◆IF(TC=140°C ) = 20A
◆QC(VR=1200V) = 140nC

ANBON

ASWCJD020120A

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Silicon Carbide Schottky Diode

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Datasheet

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Please see the document for details

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TO-247-2

English Chinese Chinese and English Japanese

2024/10/10

Revision A

AS-2240002

219 KB

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