ASWCJD020120A 1200V,20A Silicon Carbide Schottky Diode
■Die size:2.95 mm x 2.95 mm (without scribe line)
■Anode pad open size:2.65 mm x 2.65 mm
■Gross die / per 6” wafer = 1647pcs
■Main characteristics:
◆VRRM = 1200V
◆IF(TC=140°C ) = 20A
◆QC(VR=1200V) = 140nC
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Datasheet |
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Please see the document for details |
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TO-247-2 |
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English Chinese Chinese and English Japanese |
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2024/10/10 |
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Revision A |
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AS-2240002 |
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219 KB |
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