GPT040M0120HBMX1 Silicon Carbide MOSFET
■Low switching losses
■Low gate charge
■Fast High frequency operation
■Fast reverse recovery body diode
■Tight variation of RDS(on) with temperature
●Benefits
■Increase efficiency
■Increase power density
■Reduce cooling requirements
■Reduce system cost
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[ Solar inverters ][ EV charging ][ Switch mode power supplies ][ Motor drives ][ Energy Storage ][ UPS ] |
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Datasheet |
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Please see the document for details |
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TO-247-9L |
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English Chinese Chinese and English Japanese |
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2024/8/12 |
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Rev. X.3 |
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1.9 MB |
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