HM100N03KA N-Channel Enhancement Mode Power MOSFET
■The HM100N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features
■VDS =30V,ID =100A
▲RDS(ON) = 3.6mΩ (typical) @ VGS=10V
▲RDS(ON) = 5.2mΩ (typical) @ VGS=4.5V
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■Excellent package for good heat dissipation
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[ Power switching application ][ Hard switched circuits ][ high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-252-2L;TO-252 |
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English Chinese Chinese and English Japanese |
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2024/9/9 |
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v1.3 |
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924 KB |
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