HMN17N65D 650V GaN Enhancement-mode Power Transistor
■650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 8 mm × 8 mm size
●Features
■Enhancement-mode transistor - normally-OFF power switch
■Ultra-high switching frequency
■No reverse-recovery charge
■Low gate charge, low output charge
■Qualified for industrial applications according to JEDEC Standards
■ESD safeguard
■RoHS, Pb-free, REACH-compliant
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GaN Enhancement-mode Power Transistor 、 GaN-on-Silicon Enhancement-mode Power Transistor |
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[ AC-DC converters ][ DC-DC converters ][ Fast battery charging ][ High-density power conversion ][ High-efficiency power conversion ] |
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Datasheet |
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Please see the document for details |
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DFN |
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English Chinese Chinese and English Japanese |
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2023/06/03 |
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Rev. 1.1 |
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4.7 MB |
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