DWL5002M N-Channel Enhancement Mode Power MOSFET

2024-11-06
​●Description
■The DWL5002M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
​●General Features
■VDS = 50V, ID = 0.5A
▲RDS(ON) < 3Ω @ VGS =10V
▲RDS(ON) < 4Ω @ VGS =4.5V
▲ESD Rating: 2000V HBM
■High Power and current handing capability
■Lead free product is acquired
■Surface Mount Package

Semi-one

DWL5002M

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Part#

N-Channel Enhancement Mode Power MOSFET

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LED Lighting Application ]ON/OFF Switch ]Networking ]High-speed Switching ]

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Datasheet

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Please see the document for details

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SOT-23-6L

English Chinese Chinese and English Japanese

2023 Dec.

V1.1

360 KB

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