HF28-125 HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS
■The HF28-125 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF28-series products utilize the unique Spectrum Devices’ Bipolar process which offers a 69% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance
●FEATURES:
■30 MHz
■28 Volts
■IMD –30 dB
■Common Emitter
■Gold Metallization
■Pout= 125W Min. with 15 dB Gain
■Improved Collector-Base Breakdown Voltage: 110 Volts Min.
■Direct replacement for ST SD1407
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HF28-125 、 HF28-series 、 HF28 |
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RF & MICROWAVE TRANSISTORS 、 epitaxial silicon NPN planar transistor |
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[ HF SSB ][ SSB communications ] |
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Datasheet |
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Please see the document for details |
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SOE - 500 |
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English Chinese Chinese and English Japanese |
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2008/8/7 |
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177 KB |
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