LY62W10248B 1024K X 8 BIT LOW POWER CMOS SRAM

2024-09-30
●GENERAL DESCRIPTION
■The LY62W10248B is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.
■The LY62W10248B is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application.
■The LY62W10248B operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible
●FEATURES
■Fast access time : 45/55ns
■Low power consumption:
▲Operating current : 10/12mA (TYP.)
▲Standby current : 3μA (TYP.)
■Single 2.7V ~ 5.5V power supply
■All inputs and outputs TTL compatible
■Fully static operation
■Tri-state output
■Data retention voltage : 1.5V (MIN.)
■Green package available
■Package :
▲44-pin 400 mil TSOP-II
▲48-ball 6mm x 8mm TFBGA

Lyontek

LY62W10248BLY62W10248B(I)LY62W10248B-55LY62W10248B-70LY62W10248BML-45SLLY62W10248BML-45SLTLY62W10248BML-45SLILY62W10248BML-45SLITLY62W10248BML-55SLLY62W10248BML-55SLTLY62W10248BML-55SLILY62W10248BML-55SLITLY62W10248BGL-45SLLY62W10248BGL-45SLTLY62W10248BGL-45SLILY62W10248BGL-45SLITLY62W10248BGL-55SLLY62W10248BGL-55SLTLY62W10248BGL-55SLILY62W10248BGL-55SLIT

More

Part#

1024K X 8 BIT LOW POWER CMOS SRAM8,388,608-bit low power CMOS static random access memory

More

battery back-up nonvolatile memory application ]

More

Datasheet

More

More

Please see the document for details

More

More

TSOP-II;TFBGA

English Chinese Chinese and English Japanese

Mar.27.2024

Rev. 1.1

843 KB

- The full preview is over. If you want to read the whole 13 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: