HDF2S6.8MFS,L3M ESD PROTECTION DIODE
■The HDF2S6.8MFS,L3M protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events.
■Excellent clamping capability, low leakage, low capacitance,and fast response time provide best in class protection on designs that are exposed to ESD.
■It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical.
●Features
■Ultra Low Capacitance 0.35 pF
■Low Clamping Voltage
■Small Body Outline Dimensions: 0.031 x 0.024 (0.80 mm x 0.60 mm)
■Low Body Height: 0.015 (0.37 mm)
■Stand−off Voltage: 5 V
■Low Leakage
■Response Time is Typically < 1.0 ns
■IEC61000−4−2 Level 4 ESD Protection
■This is a Pb−Free Device
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Datasheet |
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Please see the document for details |
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SOD-923 |
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English Chinese Chinese and English Japanese |
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2024/5/21 |
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307 KB |
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