LESD8D7.0CAT5G ESD PROTECTION DIODE
■The LESD8D7.0CAT5G protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical.
●Features
■Small Body Outline Dimensions
■Low Body Height
■Low Leakage
■Response Time is Typically < 1 ns
■IEC61000−4−2 Level 4 ESD Protection
■IEC61000−4−4 Level 4 EFT Protection
■We declare that the material of product
■Peak Power up to 80 compliance with RoHS requirements.
■Watts @ 8 x 20 μs Pulse
■S-prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
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Datasheet |
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Please see the document for details |
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DFN1006-2L |
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English Chinese Chinese and English Japanese |
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2023/11/23 |
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342 KB |
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