HESDM3033N2T5G ESD PROTECTION DIODE
■The HESDM3033N2T5G protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class and fast response time provide best in class protection on designs that are exposed to ESD. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical.
●Features
■Small Body Outline Dimensions
■Low Body Height
■Peak Power up to 105 Watts @ 8 x 20 μs Pulse
■Low Leakage current
■Response Time is Typically < 1 ns
■ESD Rating of Class 3 per Human Body Model
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Datasheet |
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Please see the document for details |
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DFN1006-2L |
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English Chinese Chinese and English Japanese |
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2024/5/21 |
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338 KB |
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