HM5121 P-Channel Enhancement Mode MOSFET
■The HM5121 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
●General Features
■VDS = -20V,ID = -7A
■RDS(ON) < 26mΩ @ VGS=4.5V
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[ Battery protection ][ Switching application ][ Power management ][ Load switch ] |
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Datasheet |
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Please see the document for details |
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SOT23-3L |
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English Chinese Chinese and English Japanese |
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2023/11/22 |
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577 KB |
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