PSMN3R4-30BLE N-Channel Enhancement Mode MOSFET

PublishTime：2024-09-23

●Description ■The PSMN3R4-30BLE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. ●General Features ■VDS = 30V ID =120A ■RDS(ON) < 3.8mΩ @ VGS=10V

Brand of Product：	HUA XUAN YANG ELECTRONIC
Part#：	PSMN3R4-30BLE More Part#
Product Category：	N-Channel Enhancement Mode MOSFET、N-Channel MOSFET More
Application：	[ Battery protection ][ Load switch ][ Uninterruptible power supply ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-252-2L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2024/3/11
Version Number：
Data Encoding：
Data Size：	886 KB

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