TF2190(4)M High-Side and Low-Side Gate Driver
■The TF2190M is a high voltage, high speed gate driver capable of driving N-channel MOSFET’s and IGBTs in a half-bridge configuration. TF Semi’s high voltage process enables the TF2190M’s high side to switch to 600V in a bootstrap operation under high dV/dt conditions.
■The TF2190M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction.
■The TF2190M is offered in space saving 8-pin SOIC and the TF21904M in the 14-pin SOIC and operates over an extended -40℃ to +125℃ temperature range.
●Features
■Floating high-side driver in bootstrap operation to 600V
■Drives two N-channel MOSFETs or IGBTs in a half-bridge configuration
■Output drivers capable of 4.5A/4.5A typ sink/source
■Logic input (HIN and LIN) 3.3V capability
■Schmitt triggered logic inputs with internal pulldown
■Undervoltage lockout for high and low-side drivers
■Extended temperature range: -40℃ to +125℃
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High-Side and Low-Side Gate Driver 、 high voltage, high speed gate driver |
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[ Motor Controls ][ DC-DC Converters ][ AC-DC Inverters ][ Class D Power Amplifiers ] |
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Datasheet |
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Please see the document for details |
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SOIC-8(N);SOIC-14(N);SOIC |
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English Chinese Chinese and English Japanese |
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12/10/2022 |
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Rev 1.0 |
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1.6 MB |
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