FDS4935BZ Dual P-Channel Enhancement Mode MOSFET
■The FDS4935BZ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features
■VDS = -30V,ID = -11A
■RDS(ON) < 18m @ V GS=-10V
■RDS(ON) < 27m @ V GS=-4.5V
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Dual P-Channel Enhancement Mode MOSFET 、 Dual P-Channel MOSFET |
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[ PWM application ][ Load switch ] |
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2024/3/13 |
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746 KB |
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