HVESD12A1C-HD1-GS08 ESD PROTECTION DIODE

2024-09-19
●Description
■The HVESD12A1C-HD1-GS08 protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical.
●Features
■Transient protection for high-speed data lines
◆IEC 61000-4-2(ESD) ±8kV (Contact)
▲±15kV (Air)
◆IEC 61000-4-4(EFT) 40A (5/50 ns)
■Peak power dissipation: 150W (8/20us)
■Working voltages : 12V
■Ultra-small package (1.0mmx0.6mmx0.5mm)
■Protects one data, control line
■Low capacitance: 45pF (Typical)
■Low clamping voltage
■Low leakage current

HUA XUAN YANG ELECTRONIC

HVESD12A1C-HD1-GS08

More

Part#

ESD PROTECTION DIODE

More

More

Datasheet

More

More

Please see the document for details

More

More

DFN1006-2L

English Chinese Chinese and English Japanese

2024/5/22

545 KB

- The full preview is over. If you want to read the whole 4 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: