GF5045TC-1 Power Schottky Module Bypass Diode
■Low thermal resistance
■Lower forward voltage drop, low power loss
■Isolate Package design, ideal for heat dispersion
■High forward current capability
■Trench MOS Schottky technology
■Excellent anti-humidity
■Low profile package
■High forward surge capability
■All SMC parts are traceable to the wafer lot
■Additional electrical and life testing can be performed upon request
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Datasheet |
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Please see the document for details |
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QC3Q;QCC3Q |
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English Chinese Chinese and English Japanese |
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2024/8/6 |
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N2794 |
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538 KB |
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