PPH15X-20 0.15μm power pHEMT Foundry Process Data Sheet
■This 0.15μm pHEMT process is optimized for wideband high power amplification up to 45GHz. The process includes two metal interconnect layers, precision TaN resistors, high values TiWSi resistors, MIM capacitors, air- bridges and via-holes through the substrate.
■Overcoating layer is available as an option.
●Main Features
■0.15μm pHEMT process
■Typical Ft: 70GHz
■Power density: 800mW/mm
■TaN and TiWSi resistors
■GaAs resistors
■M.I.M. capacitors (standard & high density)
■Air bridges
■Via-holes
■Operation Vds= 6.0V
■Vbds > 12.0V
■Wafer thickness: 70μm
■Wafer diameter: 100mm
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2024/6/10 |
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150505_DS GaAs PPH15X_20 Process_5125 |
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369 KB |
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