CS50N06 N-Channel Trench Power MOSFET
●General Description
■The CS50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications.
●Features
■VDS=60V; ID=45A
▲RDS(ON)<15mΩ @ VGS=10V
■Ultra Low On-Resistance
■High UIS and UIS 100% Test
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[ Power switching application ][ PWM applications ][ load switching ] |
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2019-08-26 |
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Ver 4.0 |
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668 KB |
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