WMK110N20HG2 200V N-Channel Enhancement Mode Power MOSFET
■WMK110N20HG2 uses Wayon's 2nd generation powe trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.
●Features
■VDS = 200V, ID = 125A
◆RDS(on) < 11mΩ @ VGS = 10V
■Green Device Available
■Low Gate Charge
■100% EAS Guaranteed
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[ DC/DC Converter ][ LED Backlighting ][ Motor Control ] |
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2023/8/21 |
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Rev.1.0 |
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W0803929 |
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841 KB |
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