SILICON PNP EPITAXIAL TRANSISTOR 2SA1201

2023-07-13

●DESCRIPTION:
■The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications.
●FEATURES:
■High voltage: VCEO = -120V
■High transition frequency: fT =120MHz(typ.)
■Pc=1 to 2 W(mounted on ceramic substrate)

UTC

2SA12012SA1201L-x-T92-B2SA1201L-x-T92-K2SA1201G-x-AB3-R2SA1201G-x-T92-B2SA1201G-x-T92-K

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Part#

SILICON PNP EPITAXIAL TRANSISTORPNP SILICON TRANSISTOR

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power amplifier ]voltage amplifier ]

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Datasheet

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Please see the document for details

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SOT-89;TO-92

English Chinese Chinese and English Japanese

2018/01/15

QW-R204-024.E

187 KB

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